Formation of ‘‘super’’ As‐rich GaAs(100) surfaces by high temperature exposure to arsine

Autor:	J. R. Creighton, B. A. Banse
Rok vydání:	1992
Předmět:	chemistry.chemical_compound Arsine Physics and Astronomy (miscellaneous) Low-energy electron diffraction Electron diffraction Chemistry Thermal desorption spectroscopy Desorption Inorganic chemistry Analytical chemistry Atomic layer epitaxy Chemical vapor deposition Epitaxy
Zdroj:	Applied Physics Letters. 60:856-858
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.106510
Popis:	We report that arsine exposures between 100 and 350 °C will produce ‘‘super’’ As‐rich surfaces [arsenic coverages of up to ∼1.7 monolayers (ML, where 1 ML=6.26×1014 atoms cm−2)] of GaAs(100) that exhibit a c(4×4) low energy electron diffraction pattern. Temperature programmed desorption studies show that after AsD3 exposures of up to 2.6×106 L (1 L=1×10−6 Torr s) to the Ga‐stabilized surface, three excess As desorption speaks are observed with maxima at 440, 480, and 570 °C. As4 desorption is detected from the lowest temperature state, while the other states desorb primarily as As2. The significance of these results for the understanding of the atomic layer epitaxy process is addressed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1417e57911f71b491a1a6f7e0a08938 https://doi.org/10.1063/1.106510 Zobrazit plný text záznamu