Effect of Using Chemical Vapor Deposition WSi[sub 2] and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors
| Autor: | B. S. Ong, Kin Leong Pey, H. Cai, Chuan Seng Tan, Chee Lip Gan, D.A. Antoniadis, C. Y. Ong, Eugene A. Fitzgerald |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) General Chemical Engineering chemistry.chemical_element Chemical vapor deposition Dielectric Tungsten law.invention chemistry.chemical_compound Capacitor chemistry law Silicide Electrochemistry Optoelectronics General Materials Science Work function Electrical and Electronic Engineering Physical and Theoretical Chemistry business Metal gate |
| Zdroj: | Electrochemical and Solid-State Letters. 13:H328 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.3460300 |
| Popis: | We report the use of chemical vapor deposition (CVD) for tungsten silicide (WSi 2 ) gate deposition on an Al 2 O 3 /GaAs substrate for the realization of III-V metal-oxide-semiconductor capacitor stacks. The as-deposited capacitor shows smooth and abrupt interfaces and exhibits good capacitance-voltage (C-V) characteristics with low frequency dispersion at flatband voltage and accumulation. A lower dielectric constant for Al 2 O 3 (K eff ∼ 6.4) is reported due to fluorine incorporation from the precursor during the CVD process. The work function of the as-deposited WSi 2 metal gate is determined to be ∼4.2 eV and increases to ∼4.4 eV after thermal annealing at 600°C as observed from the C-V measurement due to hexagonal-tetragonal WSi 2 phase transformation. |
| Databáze: | OpenAIRE |
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