Laser ablation deposition of TiN films
| Autor: | J. Dieleman, C. J. C. M. Nillesen, S. H. Brongersma, Jacques C. S. Kools, E. van de Riet |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Laser ablation business.industry Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Fluence Surfaces Coatings and Films Pulsed laser deposition chemistry visual_art visual_art.visual_art_medium Optoelectronics Deposition (phase transition) Ceramic Thin film Tin business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1809-1814 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.577751 |
| Popis: | Excimer laser ablation of TiN ceramic in vacuum and of Ti metal in N2 gas environment is used to deposit thin TiN films on Si substrates. The dependence of thin film properties (stoichiometry, morphology, and crystallinity) on process parameters such as substrate temperature, background pressure, target quality, applied voltages, and laser fluence is investigated. It is shown that it is virtually impossible to grow stoichiometric TiN films by ablation of Ti in a N2 background atmosphere at a substrate temperature of 300 K. At a substrate temperature of 300 °C and a background pressure below 1 × 10−8 mbar, it is possible to grow polycrystalline TiN films with good stoichiometry from a TiN ceramic target. Comparison with other physical and chemical thin film deposition techniques shows that films of equivalent quality can be grown at a considerably lower substrate temperature (150 –250 °C lower) by this technique, a feature that opens interesting technological perspectives. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|