Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Autor:	A.O. Galyukov, Yu.N. Makarov, E.V. Yakovlev, K.M. Mazaev, Roman Talalaev, Lev Kadinski, B. Albert, B. Peres, D. Gotthold, A.V. Lobanova
Rok vydání:	2004
Předmět:	Inorganic Chemistry business.industry Chemistry Materials Chemistry Optoelectronics Deposition (phase transition) Mineralogy Wafer Metalorganic vapour phase epitaxy Growth rate Condensed Matter Physics business Layer (electronics)
Zdroj:	Journal of Crystal Growth. 261:190-196
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2003.11.011
Popis:	A combined modeling and experimental analysis of GaN/AlGaN deposition in the commercial vertical high-speed rotating-disk reactors produced by EMCORE is performed with reference to the optimization of the growth rate and layer composition uniformity. It is demonstrated that for both GaN and AlGaN layers the non-uniformity of 2–3% can be achieved for the growth on 2 in wafers, and the optimized growth recipe can be used for the deposition on 3 in and even 4 in wafers with the non-uniformity about 5%. Modeling results are in good agreement with the experimental data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e12aa6d8db74400ad2794426f7045e4a https://doi.org/10.1016/j.jcrysgro.2003.11.011 Zobrazit plný text záznamu Full Text from ScienceDirect