| Autor: |
M.L. Ker, L.-C. Yang, J.H. Lee, T.P. Hsu, J.S. Fang, C.S. Hsu, H.C. Chen |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
Journal of Physics and Chemistry of Solids. 69:430-434 |
| ISSN: |
0022-3697 |
| DOI: |
10.1016/j.jpcs.2007.07.046 |
| Popis: |
TaxNi1−x (x=0.65 and 0.50) thin films were prepared on p-type (1 0 0) Si substrate by magnetron dc sputtering as a barrier film with a high crystallization temperature and a low resistivity for Cu metallization. The failure properties of the studied films were elucidated using a four-point probe, X-ray diffractometry, scanning electron microscopy and transmission electron microscopy. The results indicate that as-deposited thin films had a glassy structure. The resistivity and failure temperature of TaxNi1−x (x=0.65 and 0.50) thin films were about 240.4 μΩ cm and 700 °C and 170.3 μΩ cm and 700 °C, respectively. The experimental findings revealed that the failure mechanism of the studied films involved the initial dissociation of the barrier layer annealed at a specific elevated temperature, and further silicidation with the underlying Si substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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