Influence of the adjacent layers on the crystallization kinetics of Ge2Sb2Te5 thin films

Autor:	Petr Lazarenko, Elena Kirilenko, I. V. Sagunova, A. O. Yakubov, Alexey Sherchenkov, A. V. Babich
Rok vydání:	2020
Předmět:	Auger electron spectroscopy Materials science Analytical chemistry chemistry.chemical_element 02 engineering and technology Activation energy Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 010406 physical chemistry 0104 chemical sciences Amorphous solid law.invention Differential scanning calorimetry chemistry law Physical and Theoretical Chemistry Thin film Crystallization 0210 nano-technology Tin
Zdroj:	Journal of Thermal Analysis and Calorimetry. 142:1019-1029
ISSN:	1588-2926 1388-6150
DOI:	10.1007/s10973-020-10013-5
Popis:	The influence of the adjacent layers (SiO2, Al, Ni, Ti, W, TiN, TiN/W) on the crystallization kinetics of Ge2Sb2Te5 thin films was investigated using the techniques based on the application of two different methods—differential scanning calorimetry and measurements of the resistivity temperature dependences. Thin films were deposited by the magnetron sputtering. The composition of the films was determined by the Auger spectroscopy and was close to Ge2Sb2Te5. X-ray diffraction was used to investigate the structure of thin films and showed that the as-deposited films were in an amorphous state, while heat treatment at 250 °C for 30 min led to the crystallization to the cubic (rock salt) phase. Effective activation energy of crystallization obtained by differential scanning calorimetry at the beginning of the crystallization was 1.8 eV and then slightly decreased to 1.7 eV at the end of the process. The values of the effective activation energy obtained from the measurements of the resistivity temperature dependences were in the range of 2.5–2.9 eV at the beginning and in the range of 2.2–3.5 eV at the end of the crystallization process. The difference in the effective activation energies of crystallization for the GST225 thin films deposited on the different sublayers is caused by the influence of the neighboring sublayers on the crystallization process. It was found that crystallization temperatures correlate with the effective activation energies and increase with their growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e11060deb97212dfec0e4646d2f2cc7a https://doi.org/10.1007/s10973-020-10013-5 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
Nepřihlášeným uživatelům se plný text nezobrazuje	K zobrazení výsledku je třeba se přihlásit.