Rapid-Thermal Nitridation of SiO2 for Radiation-Hardened MOS Gate Dielectrics
| Autor: | W.E. Bailey, Mishel Matloubian, R. Sundaresan |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
Nuclear and High Energy Physics
Negative-bias temperature instability Materials science business.industry Transistor Electrical engineering Oxide Dielectric Radiation Threshold voltage law.invention chemistry.chemical_compound Nuclear Energy and Engineering chemistry law Rapid thermal processing Thermal Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nuclear Science. 33:1223-1227 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.1986.4334582 |
| Popis: | Nitridation of thin SiO2 layers has been achieved by a rapid thermal process in the presence of ammonia. The pre-and post-radiation performances of transistors with nitridated gate insulators have been presented. Nitridation causes a lowering of threshold voltage and channel mobility. Total dose testing indicates that nitridated gate oxides, under certain conditions, produce lower threshold voltage shift as well as less interface state generation than control (oxide) samples. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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