Autor:	Slavomír Gabáni, Karol Flachbart, E.S. Konovalova, Josef Šebek, M. Orendáč, V. Pavlík, Y. Paderno
Rok vydání:	2002
Předmět:	Residual resistivity Materials science Semiconductor Condensed matter physics business.industry Impurity Electrical resistivity and conductivity General Physics and Astronomy Coherent states State (functional analysis) Electronic band structure business Heat capacity
Zdroj:	Czechoslovak Journal of Physics. 52:279-282
ISSN:	0011-4626
DOI:	10.1023/a:1014400603080
Popis:	We have investigated the low temperature properties of the narrow-gap semiconductor SmB6 by means of electrical resistivity and specific heat measurements. Results imply that the residual resistivity below about 3 K is non-activated and the corresponding state, which is formed within the in-gap states, has a metallic-like nature. Heat capacity measurements confirmed the metallic-like properties of the in-gap states and revealed, moreover, an enhancement of the specific heat below 2 K which is more expressive for the sample with a lower amount of impurities. The observed behaviour can be attributed to the formation of a coherent state within the in-gap states of this compound.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e10ccca63c0ca0e8e88304f6afb009d4 https://doi.org/10.1023/a:1014400603080 Zobrazit plný text záznamu Full text from SpringerLink