MIM capacitance efficiency study for high speed I/O power integrity network design: MIM and MIMless high speed I/O performance characterization
| Autor: | Fern Nee Tan, Ming Dak Chai, Mohamad Shahrir bin Tamrin |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Differential capacitance business.industry Electrical engineering Power integrity Hardware_PERFORMANCEANDRELIABILITY Capacitance law.invention Capacitor Parasitic capacitance Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Capacitance probe business Electrical impedance Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | 2015 6th Asia Symposium on Quality Electronic Design (ASQED). |
| DOI: | 10.1109/acqed.2015.7274010 |
| Popis: | Capacitance is very important in High Speed I/O power integrity network design. There are different form of capacitors being used on the High Speed I/O Power Integrity Network to ensure the performance of the circuit. In this paper, the effectiveness of MIM capacitance and MOS capacitance is compared. MIM capacitance comes in bulk quantity but placed further away from the HSIO circuits. While MOS capacitance comes in considerably lower quantity but placed closer to the HSIO circuits. As such, there is a performance trade-off during the power integrity design considering the two different capacitances. While MOS capacitance is the preferred choice, the introduction of MIM capacitance has become an attractive option; as it offers much more capacitance at lower price. Can MOS capacitance be replaced by the MIM capacitance? The discussion will focus on PDN analysis to describe the change in behavior and the validation results to show the gap when MIM capacitance is completely removed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|