Pulsed Ruby laser induced surface oxidation of GaAs using reactive quenching at the liquid-solid interface
| Autor: | Anupam Madhukar, S.B. Ogale, S.S. Shushtarian, S. M. Kanetkar |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Quenching
chemistry.chemical_classification Materials science Mechanical Engineering Ruby laser Analytical chemistry Oxide Electronic structure Condensed Matter Physics law.invention chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Mechanics of Materials law X-ray crystallography General Materials Science Irradiation Inorganic compound |
| Zdroj: | Materials Letters. 13:325-329 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/0167-577x(92)90062-o |
| Popis: | A technique of pulsed Ruby laser induced liquid-solid interface reaction is employed to induce controlled and selective oxide growth on GaAs (111). Small-angle and bulk XRD spectra have been recorded at different stages of processing for investigations of the structural states near the surface and the interface regions. The changes in the surface electronic structure due to oxide growth are characterized by analysing Ga(3d) and As (3d) XPS spectra. Results are reported for the dependence of oxidation on the energy density of the incident laser beam and the number of pulses. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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