Temperature dependent localization dynamics of excitons in Mg0.14Zn0.86O alloyed semiconductor
Autor: | Takayuki Makino, Md. Sherajul Islam, Md. Soyaeb Hasan, Eiichi Kobayashi |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Photoluminescence Materials science Condensed matter physics business.industry Exciton Monte Carlo method Relaxation (NMR) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Laser linewidth symbols.namesake Semiconductor Stokes shift 0103 physical sciences symbols Electrical and Electronic Engineering 0210 nano-technology business Spectroscopy |
Zdroj: | Physica B: Condensed Matter. 558:127-130 |
ISSN: | 0921-4526 |
DOI: | 10.1016/j.physb.2019.01.049 |
Popis: | This paper explicates the temperature induced localization dynamics of exciton in Mg0.14Zn0.86O alloyed semiconductor. The photoluminescence (PL) spectroscopy measurement has been performed at the temperatures ranging from 16 K to 180 K. The linewidths of the PL bands reveal the W-shaped behavior with temperature. We also observe the temperature induced S-shaped characteristic of Stokes shift. These experimental findings are after that modeled using the Monte Carlo simulation of exciton hopping and relaxation. The simulation results quantitatively agree with both the Stokes shift and the PL linewidth for the whole temperature regime while accounting for the band potential fluctuation, σ = 17 meV and the additional inhomogeneous broadening, Γ = 8 meV. The band potential fluctuation is attributed here to the inhomogeneous distribution of Mg in Mg0.14Zn0.86O alloyed semiconductor. These results may provide a meaningful reference to the development and design of ZnO based optoelectronic devices. |
Databáze: | OpenAIRE |
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