Research on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail Vehicles
| Autor: | Dong Yi Meng, Yu Jie Chang, Li Weijie, Chun Yang, Yi Zhong Hong Lv, Li Jun Diao |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Mechanical Engineering media_common.quotation_subject Switching frequency Electrical engineering Insulated-gate bipolar transistor Condensed Matter Physics Mechanics of Materials MOSFET Contrast (vision) General Materials Science Urban rail business Power density media_common |
| Zdroj: | Materials Science Forum. 954:188-193 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.954.188 |
| Popis: | Power electronic devices are the basis of power converters, and excellent device performance improves that of power converters directly. In this paper we take SiC MOSFET CAS120M12BM2 (1200V/ 120A) and Si IGBT FF150R12KE3G (1200V/150A) as examples, which have the same voltage rating, to apply to the converters of urban rail vehicles, whose switching frequency, power density and efficiency are analyzed and contrasted. The results show that the switching frequency of the SiC MOSFET converter can be increased to 50kHz, at the same time its power density and efficiency are significantly higher than that of the Si IGBT converter. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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