Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2

Autor:	J. Jedrzejewski, Z.S. Yanovitskaya, M.B. Gulyaev, I.V. Antonova, Y. Goldstein
Rok vydání:	2007
Předmět:	Materials science Silicon Condensed matter physics Oxide Analytical chemistry chemistry.chemical_element Percolation threshold Activation energy Conductivity Variable-range hopping chemistry.chemical_compound chemistry Percolation Electrical measurements
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
Popis:	The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K with activation energy from 2.1 eV near percolation threshold and down to 0.1 eV for higher Si content. The variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e0e1cb4e61a0c77790a4e46c4f76fab0 https://doi.org/10.1063/1.2730125 Zobrazit plný text záznamu