Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon
| Autor: | Guanglin Kong, Huiying Hao, Xiangbo Zeng, Xianbo Liao, Hongwei Diao, Ying Xu |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Silicon Hydrogen Analytical chemistry chemistry.chemical_element Mineralogy Chemical vapor deposition Condensed Matter Physics Microstructure law.invention Amorphous solid Inorganic Chemistry Crystallinity chemistry law Plasma-enhanced chemical vapor deposition Solar cell Materials Chemistry |
| Zdroj: | Journal of Crystal Growth. 281:344-348 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2005.04.067 |
| Popis: | A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from a mixture of SiH4 diluted in H, The effect of hydrogen dilution ratios R-H = [H-2]/[SiH4] on microstructure of the films was investigated. Photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that more the crystalline volume fraction in the silicon films, the higher mobility life-time product (mu tau), better the stability and lower the photosensitivity. Those diphasic films contained 8%-31% crystalline volume fraction can gain both the fine photoelectronic properties and high stability. in the diphasic (contained 12% crystalline volume fraction) solar cell, we obtained a much lower light-induced degradation of similar to 2.9%, with a high initial efficiency of 10.01% and a stabilized efficiency of 9.72% (AM1.5, 100 mW/cm(2)). (c) 2005 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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