Calculation of the inversion channel resistance for n-MOSFETs using a classical and semi-quantum-mechanical model

Autor:	Wolfgang Daum
Rok vydání:	1985
Předmět:	Physics symbols.namesake Classical mechanics Electric field Mathematical analysis MOSFET Gauss symbols Inversion (meteorology) Electrical and Electronic Engineering Poisson distribution Quantum Schrödinger's cat
Zdroj:	International Journal of Electronics. 58:331-340
ISSN:	1362-3060 0020-7217
DOI:	10.1080/00207218508939027
Popis:	Two models are presented to calculate the inversion channel carrier distribution of an n-type MOSFET. The classical approach solves Poisson's equation and applies Fermi-Dirac statistics in conjunction with Gauss's law to determine the carrier distribution. The semi-quantum-mechanical model solves Schrodinger's equation decoupled from Poisson's equation and the Fermi-Dirac statistics by assuming a constant electrostatic field and quantized energy levels. The results of both models are used to determine the channel resistance taking transversal field initiated mobility reductions into account. A comparison is made to a practical device and the results discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e0deba10f1d5912dca925e49626b6bb7 https://doi.org/10.1080/00207218508939027 Zobrazit plný text záznamu