| Autor: |
Wei-Yu Lee, Hsin-Che Lee, Hsin Jung Lee, Chen-Che Lee, Wei-Ching Chuang |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE). |
| Popis: |
In this work, a method of analyzing the crystal quality of epitaxial GaN by Raman spectroscopy was established. An AlN layer was deposited on sapphire substrate by sputtering and an AlGaN/GaN HEMT device is fabricated. The relationship between the dislocation density of GaN with/without AlN layer and the electrical performance was studied. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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