III-nitride efficient LEDs

Autor: Yury Georgievich Shreter, Y. T. Rebane, Vladislav E. Bougrov, Pei Jih Wang, C. L. Tseng, B. S. Yavich, Wang Nang Wang, Sergey Stepanov
Rok vydání: 2001
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.450033
Popis: A III-nitride blue LED structure based on the system of two wells with charge asymmetric resonance tunneling (CART), which allows enhancing the number of the electrons captured into the active region with the quantum well, was systematically studied. The barrier design uses the charge asymmetric resonance-tunneling phenomenon, which allows making the barrier transparent for electrons and blocking for holes. The growth and post-growth processes were optimized to achieve an efficient CART LED. The output power of 4 mW at the operating current of 20 mA has been achieved, corresponding to the external efficiency of 6%. Results presented in this report include the optimization of the quantum well growth parameters, bowing parameter for InGaN alloys grown on GaN, dry etching of III-nitride materials, Ohmic contacts to p- and n- type GaN, electrostatic discharge (ESD) problems related with the reliability of LEDs. The results presented include also modulation-technique LED characterization to tune the maximum radiative-recombination efficiency in accordance with the common operating current density.
Databáze: OpenAIRE