Polarization-independent 90°-turns in single-mode micro-waveguides on silicon-on-insulator wafers for telecommunication wavelengths

Autor: Eric Cassan, Laurent Vivien, Suzanne Laval
Rok vydání: 2004
Předmět:
Zdroj: Optics Communications. 235:83-88
ISSN: 0030-4018
DOI: 10.1016/j.optcom.2004.02.080
Popis: A theoretical analysis of possible ways to achieve light 90°-turns with silicon-on-insulator (SOI) polarization-independent micro-waveguides, which are key elements for telecommunication applications, is presented. Efficiency of various fully-etched corner mirrors and 90°-bends has been evaluated for both (well-designed) rib and (square) strip waveguides using three-dimensional finite difference time domain (3D FDTD) simulations. It is shown that SOI rib micro-waveguides which are polarization insensitive have better results with corner mirrors provided that the waveguide height is more that 1.5 μm (loss R is larger than a few microns (loss R>4 μ m). In both cases, loss difference between quasi-TE and quasi-TM polarization is estimated to less than 0.04 dB.
Databáze: OpenAIRE