Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects
| Autor: | A. V. Ulanova, E. V. Ranneva, V. D. Kalashnikov, M. E. Chernyak, A. M. Tsyrlov, V. S. Fedosov, A. N. Shchepanov, D. O. Titovets, A. Yu. Nikiforov, A. I. Verizhnikov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Masking (art) Materials science business.industry X-ray 02 engineering and technology Radiation 021001 nanoscience & nanotechnology Condensed Matter Physics Chip 01 natural sciences Electronic Optical and Magnetic Materials 0103 physical sciences Materials Chemistry Dose effect Optoelectronics Irradiation Electrical and Electronic Engineering 0210 nano-technology business Radiation hardening |
| Zdroj: | Russian Microelectronics. 48:415-421 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739719060039 |
| Popis: | This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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