Novel Metal-Germinade Schottky Barrier Contacts for Si-Photonics Application
| Autor: | Kah-Wee Ang, Dim-Lee Kwong, Mingbin Yu, Guo-Qiang P. Lo |
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| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | ECS Transactions. 16:747-754 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.2986834 |
| Popis: | To reap the full benefits of superior transport and optical properties of germanium, a low-resistance metal-germanides contact that is compatible with existing Si CMOS process technology would be highly desirable. In this abstract, we report the developments of nickel-germanide (NiGe) contact technology and its combination with Schottky barrier engineering techniques (e. g., dopants and valence-mending absorbate segregations) for contact resistance improvement. In addition, we explore the application of these techniques in NiGe Schottky barrier metal-Ge-metal (MSM) photodetector for low dark current and high speed photodetection applications, such as through Si:C (Metal direct contact on Ge) or Sincorporation (for NiGe). Sulfur is used as example in the valencenmending absorbate scheme in this work. In both cases, significant suppression of dark current (~103 to 104 ×) was observed, with the enhanced hole Schottky barrier heights to 0.49eV (S-incorporated) or 0.52eV (thin Si:C layer). In both surface-illuminated and waveguided schemes, 12-15GHz speed were obtained with 1V operating bias. |
| Databáze: | OpenAIRE |
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