Structure, optical properties and visible-light-induced photochemical activity of nanocrystalline ZnO films deposited by atomic layer deposition onto Si(100)
| Autor: | I.A. Kasatkin, S.Y. Kuchmiy, V. E. Drozd, A. A. Lisachenko, V.V. Titov, L.L. Basov, O.L. Stroyuk |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon Metals and Alloys Analytical chemistry chemistry.chemical_element Nanotechnology Surfaces and Interfaces Substrate (electronics) Microstructure Nanocrystalline material Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition chemistry X-ray photoelectron spectroscopy Materials Chemistry Texture (crystalline) Layer (electronics) |
| Zdroj: | Thin Solid Films. 573:128-133 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2014.11.023 |
| Popis: | Nano-layers of ZnO (thickness 2–300 nm) were deposited on the surface of p -Si(100), SiO x / p -Si(100), and n -Si(111) using the atomic layer deposition technique. Morphology, microstructure, and electronic structure of the ZnO/Si(100), ZnO/SiO x /Si(100), and n - Si(111) films were characterized using scanning electron microscopy, X-ray diffraction and reflectometry, and X-ray photoelectron spectroscopy. The layers have good adhesion to the substrate, polycrystalline structure, and uniform thickness. Starting from the thickness of 4 nm, the hexagonal crystal structure of zincite (wurtzite-type) could be detected with a weak texture changing from [100] to [001] with increasing thickness of the layer. Desorption of H 2 O and CO 2 at ~ 10 − 4 Pa from the surface under irradiation with visible light (λ > 500 nm)—the interval of ZnO transparency—was measured by mass-spectrometry. This proves a sensitization of the photocatalytically active ZnO films to the visible light by silicon substrate and opens possibilities of using the composite Si/ZnO materials. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect