Effect of thin titanium interfacial layers on the formation of palladium silicide on silicon
| Autor: | D. M. Hoffman, J. T. McGinn, J. H. Thomas, F. J. Tams |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Materials science
Silicon Inorganic chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Epitaxy Electron beam physical vapor deposition Surfaces Coatings and Films chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Chemical engineering Transmission electron microscopy Silicide Thin film Titanium |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:1941-1945 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.574885 |
| Popis: | Thin titanium and palladium were deposited on (100) and (111) silicon at 250 °C by an electron beam in a vacuum of 10−6 to 10−7 Torr. Analysis by transmission electron microscopy, x‐ray photoelectron spectroscopy, Auger, and Rutherford backscattering spectroscopy showed that, in the range of titanium thicknesses from 2 to 11 A, heteroepitaxial Pd2Si was formed with the TiOx moving to the surface. We propose that the Ti, which has a high heat of formation for the oxide, scavenges oxygen and water from the Si–SiOx surface promoting the formation of a uniform layer of heteroepitaxial Pd2Si grains. |
| Databáze: | OpenAIRE |
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