Bowing of GaN bulk crystals with mismatched epitaxial structures of (AlInGa)N

Autor:	Bolesław Łucznik, Grzegorz Targowski, S. Porowski, M. Kryśko, M. Sarzynski, Robert Czernecki, K. Krowicki, Michał Leszczyński, Izabella Grzegory
Rok vydání:	2005
Předmět:	Crystallography Materials science business.industry Hydride Bowing High pressure Optoelectronics Critical radius Substrate (electronics) Metalorganic vapour phase epitaxy business Epitaxy Bulk crystal
Zdroj:	physica status solidi (c). 2:1031-1034
ISSN:	1610-1634
DOI:	10.1002/pssc.200460615
Popis:	We measured the bowing of structures consisting of epitaxial layers on bulk GaN substrates. The bowing is a result of lattice mismatch between layers and substrate. The layers were grown by HVPE (Hydride Vapor Phase Epitaxy) and MOVPE (Metalorganic Vapor Phase Epitaxy) techniques. The substrates are produced using high-temperature, high pressure method. In the present paper, the results of bowing measurements are presented compared with theoretical calculations. Based on the results, critical radius of bowing is estimated. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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