| Autor: |
Thomas Gutt, Volodymyr Komarnitskyy, Carsten Schaeffer, Daniel Domes, Dorothea Werber, Frank Pfirsch, Thomas Hunger |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). |
| Popis: |
A reverse conducting IGBT in trench technology is presented. By this approach no carrier life time means are necessary to balance static and dynamic losses of the diode. The diode's p-emitter efficiency can be dynamically tailored by the applied gate voltage due to inversion charge carriers in the vicinity of the gate trench. This opens up the opportunity for a variety of gate control schemes with the aim of a charge carrier reduction before commutation thus reducing the recovery and the corresponding IGBT turn-on losses while the on-state diode losses remain low. A simple substitution of the IGBT and diode dies by the RCDC chips in the industry standard packages enables a significant increase of the power density (e.g. up to 30% for typical traction application) due to a thermal benefit given by lower thermal resistances as well as by a reduction of the dynamic losses due to special gate control. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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