Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode
| Autor: | Byung-Hyun Lee, Yang-Kyu Choi, Jae Hur, Tewook Bang, Dae-Chul Ahn, Seung-Bae Jeon, Minho Kang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping Electrical engineering Nanowire 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Transverse plane Logic gate 0103 physical sciences Electrode Optoelectronics Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business Quantum tunnelling Leakage (electronics) |
| Zdroj: | IEEE Electron Device Letters. 37:541-544 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | A comprehensive analysis of the gate-induced drain leakage (GIDL) current of vertically stacked nanowire (VS-NW) FETs was carried out. In particular, two different operational modes of the VS-NW, an inversion mode (IM) and a junctionless mode (JM), were compared. The GIDL current of the JM-FET was considerably smaller than that of the IM-FET, and the reason for the difference was consequently determined by numerical simulations. It was found that the source of the difference between the IM-FET and JM-FET was the difference in source/drain (S/D) doping concentration, where the depletion width becomes the tunneling width, considering a long extension length at the S/D regions. The experimental results showed that the GIDL current of the NW FET was significantly controlled by longitudinal band-to-band tunneling (BTBT), rather than the transverse BTBT, as had been reported in the previous literature. |
| Databáze: | OpenAIRE |
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