Electrical field effect on the optical threshold energy of donor and acceptor levels in chromium-doped GaP

Autor:	Hassen Maaref, A Zerraı̈, Ridha Ajjel, W Ulrici, Georges Bremond, M.A Zaı̈di
Rok vydání:	2003
Předmět:	Materials science Doping Field effect Thermal ionization Photoionization Electrical and Electronic Engineering Ionization energy Atomic physics Condensed Matter Physics Spectroscopy Threshold energy Acceptor Electronic Optical and Magnetic Materials
Zdroj:	Physica B: Condensed Matter. 336:362-368
ISSN:	0921-4526
DOI:	10.1016/s0921-4526(03)00312-0
Popis:	The electrical field effect on the optical threshold energy have been studied using electrical deep level optical spectroscopy technique. The measurements were focused on the Cr3+/4+ donor level and on the Cr2+/3+ acceptor level in Cr-doped GaP. It is found, in the case of the Cr3+/4+, that the optical threshold as the thermal ionization energies are field dependent. This behavior allows us to determine each position at zero field and then the Frank–Condon shift. Using these parameters, a configuration coordinate diagram is given. In the case of the Cr2+/3+ acceptor level, the optical threshold is also field dependent.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e0a0ec29cf3a4780558ca3529f009703 https://doi.org/10.1016/s0921-4526(03)00312-0 Zobrazit plný text záznamu Full Text from ScienceDirect