Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser performance

Autor:	Marek Osinski, J. Yellowhair, Jinhyun Lee, Gennady A. Smolyakov, Yan-Rui Zhao, Chiyu Liu, Hongjun Cao, Hai Ling
Rok vydání:	2003
Předmět:	Materials science business.industry Quantum point contact Physics::Optics Laser law.invention Vertical-cavity surface-emitting laser Condensed Matter::Materials Science law Quantum dot laser Optoelectronics Quantum efficiency business Current density Quantum well Diode
Zdroj:	Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Popis:	Summary form only given. In this paper, we report the fabrication and characterization of otherwise identical diode lasers with non-intermixed and intermixed active regions. Measured characteristics of these lasers are used to extract information about changes in threshold current density, internal optical loss, internal quantum efficiency, material gain, etc., introduced by the impurity-free vacancy diffusion process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e09a5dbe8c99211ee0412372d0812470 https://doi.org/10.1109/cleo.2002.1034308 Zobrazit plný text záznamu