Pulsed laser annealing of Sn-implanted Si single crystal

Autor:	A. Stonert, B. Kozankiewicz, D. Żymierska, D. Klinger, J. Auleytner, L. Nowicki
Rok vydání:	2004
Předmět:	Materials science Dopant Annealing (metallurgy) Doping Physics::Optics General Physics and Astronomy Laser Molecular physics law.invention Crystallography Ion implantation Electron diffraction law Single crystal Surface reconstruction
Zdroj:	Journal of Applied Physics. 95:2331-2336
ISSN:	1089-7550 0021-8979
Popis:	A very disturbed near-surface layer was formed by Sn-ion implantation in a Si single crystal. For crystal lattice reconstruction of this layer and for change of the dopant distribution pulsed laser annealing was applied. In order to determine the optimal value of the energy density of laser pulse numerical calculations were performed. The experiments carried out by means of reflection high-energy electron diffraction and by Rutherford backscattering have shown that laser annealing caused the formation of the epitaxial Si1−xSnx layer. A good crystal quality of this layer, comparable with the quality of the single crystal Si matrix, as well as a good substitutional location of the Sn dopant atoms were obtained for the laser beam energy density value equal to the calculated optimal one.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e092471b37f68b1d10e33db7cb226304 https://doi.org/10.1063/1.1643781 Zobrazit plný text záznamu