Multiple-Cell Upsets Induced by Single High-Energy Electrons
| Autor: | Adam R. Duncan, Matthew J. Kay, Austin H. Roach, Dobrin P. Bossev, Aaron M. Williams, Matthew J. Gadlage |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Physics Nuclear and High Energy Physics 010308 nuclear & particles physics Electron 01 natural sciences Linear particle accelerator Upset Ion Nuclear physics Nuclear Energy and Engineering Ionization 0103 physical sciences Neutron Static random-access memory Electrical and Electronic Engineering Scaling |
| Zdroj: | IEEE Transactions on Nuclear Science. 65:211-216 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2017.2756441 |
| Popis: | Multiple-cell upsets (MCUs) in static random access memory-based field-programmable gate arrays from three different technology nodes are recorded from single-particle interactions with 20–52 MeV electrons. Indirect ionization events associated with an electronuclear reaction are shown to be the cause of the MCUs. As has been observed with other ionizing particles such as heavy ions and neutrons, the electron upset cross section per bit is shown to decrease with smaller technology nodes, but the prevalence of electron-induced MCUs increases with scaling. |
| Databáze: | OpenAIRE |
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