Model for calculating the refractive index of a III–V semiconductor
| Autor: | C. Mathieu, Sara Lebid, Macho Anani, Hamza Abid, Zouaoui Chama, Youcef Amar |
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| Rok vydání: | 2008 |
| Předmět: |
Physics
General Computer Science Band gap business.industry General Physics and Astronomy General Chemistry Numerical models Computational Mathematics Optics Semiconductor Mechanics of Materials Range (statistics) General Materials Science Statistical physics Empirical relationship business Refractive index Energy (signal processing) |
| Zdroj: | Computational Materials Science. 41:570-575 |
| ISSN: | 0927-0256 |
| DOI: | 10.1016/j.commatsci.2007.05.023 |
| Popis: | An empirical relationship modeled by a theoretical numerical model has been presented for estimating the refractive indices of semiconductors, especially the III–V semiconductors, relative to their energy gaps. This model is based on the fact that there is a strong correlation between the energy gap and the refractive index of a given material. This physical relationship remains strictly intrinsic and specific to the material considered. The performance of this model is compared with that of some other numerical models established by other authors. An analysis based on calculations of the errors between this model and the experimental data has also been carried out. For the first time, the present model is applicable to the whole range of energy gaps, taking into account the fact that the refractive index for an infinite energy gap is equal to one. Good agreement is observed between the computed values and the refractive indices reported in the literature for well-known semiconductors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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