Electronic structure and optical properties of a new type of semiconductor material: graphene monoxide
| Autor: | Yufeng Zhang, Xunwang Yan, Gui Yang |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Graphene Physics::Optics Monoxide Nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Semiconductor law Materials Chemistry Density of states Optoelectronics Direct and indirect band gaps Astrophysics::Earth and Planetary Astrophysics Physics::Chemical Physics Electrical and Electronic Engineering business Electronic band structure Bilayer graphene Graphene nanoribbons |
| Zdroj: | Journal of Semiconductors. 34:083004 |
| ISSN: | 1674-4926 |
| Popis: | The electronic and optical properties of graphene monoxide, a new type of semiconductor material, are theoretically studied by first-principles density functional theory. The calculated band structure shows that graphene monoxide is a semiconductor with a direct band gap of 0.95 eV. The density of states of graphene monoxide and the partial density of states for C and O are given to understand the electronic structure. In addition, we calculate the optical properties of graphene monoxide, including the complex dielectric function, absorption coefficient, complex refractive index, loss-function, reflectivity and conductivity. These results provide a physical basis for potential application in optoelectronic devices. |
| Databáze: | OpenAIRE |
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