Effects of Interfacial Oxide Layer for the Ta2O5Capacitor After High-Temperature Annealing
| Autor: | Shoou-Jinn Chang, Uang Heay Liaw, Shi Chung Sun, Chun Hsing Liu, Jone F. Chen, Jiann Shing Lee |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Annealing (metallurgy) Interfacial oxide Inorganic chemistry General Engineering General Physics and Astronomy Chemical vapor deposition Amorphous solid law.invention Capacitor law Electric field Grain boundary Composite material High-κ dielectric |
| Zdroj: | Japanese Journal of Applied Physics. 41:690-693 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.41.690 |
| Popis: | Thin Ta2O5 films were prepared by low-pressure chemical vapor deposition (LPCVD) and subsequently annealed in O2 ambient at various temperatures. It was found that the leakage current of the Ta2O5/SiOx capacitor was controlled by the Ta2O5 layer when the annealing temperature was lower than 700°C. On the other hand, the leakage current was controlled by the interfacial oxide layer when the annealing temperature was higher than 700°C. It was also found that we could achieve an equivalent thin oxide thickness and a small leakage current at the same time from the Ta2O5/SiOx capacitor with a suitable thermal annealing treatment. |
| Databáze: | OpenAIRE |
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