Revised theory of current transport through the Schottky structure
| Autor: | Juraj Racko, Daniel Donoval, M. Barus, Alena Grmanová, V. Nagl |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
business.industry
Chemistry Electrical engineering Schottky diode Thermionic emission Electron Condensed Matter Physics Electronic Optical and Magnetic Materials Computational physics Semiconductor Depletion region Electric field Materials Chemistry Electrical and Electronic Engineering Current (fluid) business Voltage |
| Zdroj: | Solid-State Electronics. 35:913-919 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(92)90318-7 |
| Popis: | A new treatment of the theory describing carrier transport across the rectifying metal-semiconductor interface is presented. Besides the thermionic emission or drift-diffusion mechanisms of current flow, the generation-recombination processes in the analyzed structure have also been taken into account. Our approach is based on the direct solution of Poisson and continuity equations for electrons and holes. This leads to a more general expression for the total current flow through the interface which describes not only the thermionic emission/drift-diffusion current but also the generation-recombination current and injection of holes into the quasi-neutral semiconductor region. The comparison of simulated characteristics based on the approach of Crowell and Sze and on our approach with experimental characteristics measured on a real Schottky structure shows very good agreement of all characteristics in the forward direction and also for a low reverse bias. However, for higher reverse voltages the discrepancy between experimental and simulated characteristics based on the model of Crowell and Sze could be clearly seen while the fit of experimentally measured points by our model is extremely good until the leak current affects the experimental characteristic. This very good correlation was reached due to the generation of electrons and holes within the space charge region which becomes more significant at higher reverse voltages. Generated electrons and holes are separated by an electric field in the analyzed structure. Then the additional hole current is flowing through the interface from semiconductor to metal and the additional electron current flowing through the reference ohmic contact which contributes to the total current. |
| Databáze: | OpenAIRE |
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