Pressure sensitivity of the peak current of gallium arsenide tunnel diodes

Autor:	E. M. Alekseeva, A. P. Vyatkin, N. P. Krivorotov
Rok vydání:	1976
Předmět:	Materials science business.industry Band gap Doping Hydrostatic pressure General Physics and Astronomy chemistry.chemical_element Gallium arsenide Arsenide chemistry.chemical_compound chemistry Optoelectronics Atomic physics Gallium business Diode Bar (unit)
Zdroj:	Soviet Physics Journal. 19:1163-1165
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf00891468
Popis:	The influence of hydrostatic pressure on the peak current of gallium arsenide tunnel diodes is studied in this paper. Analysis of the experimental pressure dependence of the peak current for diodes with different levels of doping in the n region and comparison with the theory served as the basis for finding the size of the energy gap between the absolute and secondary minima at the point X1 and the velocity of travel of the energy gap with pressure: Δ0=(0.37±0.01) eV; dΔ/dP = −(15±2)·10−6 eV/bar.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e07955cda4521c0a6bca1304568665ef https://doi.org/10.1007/bf00891468 Zobrazit plný text záznamu Full text from SpringerLink