Hydrogen interaction with defects and impurities in 6H-SiC
| Autor: | Janna Bonds Dufrene, Jeffrey B. Casady, Yaroslav Koshka |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Photoluminescence
Plasma etching Materials science Hydrogen Passivation Annealing (metallurgy) Doping chemistry.chemical_element Condensed Matter Physics Photochemistry Electronic Optical and Magnetic Materials chemistry Impurity Vacancy defect Materials Chemistry Electrical and Electronic Engineering |
| Zdroj: | Journal of Electronic Materials. 32:423-425 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | The dynamics of hydrogen capture and release from trapping centers in 6H-SiC after plasma hydrogenation and annealing was investigated by low-temperature photoluminescence (PL). Indications of competing processes of hydrogen capture by different trapping centers were observed. Passivation of Al acceptors with hydrogen is the dominating process during plasma hydrogenation or plasma etching. Irreversible release of hydrogen from Al-trapping centers and additional trapping of hydrogen by Si vacancy (VSi) to form a VSi+H complex occurred during annealing at temperatures above 300°C. It is suggested that the VSi+H complex may be playing an important role in keeping hydrogen in SiC after higher temperature treatment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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