Direct insight to SRAM array devices in advanced FinFET nodes by large scale ultra-fast in-situ characterization
| Autor: | Daniel Marienfeld, Randy W. Mann, Lucile C. Teague Sheridan, Yuncheng Song, Chong Khiam Oh, Joseph Versaggi, Sheng Xie, Dirk Fimmel, Wolfgang Finger, Dapeng Sun, Matthias Hoffmann |
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| Rok vydání: | 2019 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Reliability (semiconductor) Scale (ratio) Computer science Logic gate 0202 electrical engineering electronic engineering information engineering Electronic engineering Ultra fast 02 engineering and technology Static random-access memory 020202 computer hardware & architecture Characterization (materials science) |
| Zdroj: | 2019 IEEE 11th International Memory Workshop (IMW). |
| Popis: | This work reports the application of an ultra-fast insitu characterization capability in SRAM array in advanced nodes. The methodology was tested in fully functional SRAM arrays in 14 nm and 7 nm FinFET nodes, allowing assessment of individual devices in the array and obtaining high sigma statistics. The technique benefits SRAM optimization, identification of yield detractors and reliability learning. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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