Low Teperature Synthesis of Silicon Oxide and Oxynitride Films by Reactive Laser Ablation

Autor:	W. Marine, S. De unamumo, E. Fogaassy, B. Lans, C. Fuchs, Abdelilah Slaoui, J.P. Stoquert
Rok vydání:	1992
Předmět:	Materials science Laser ablation Silicon business.industry chemistry.chemical_element Substrate (electronics) Fluence Silicon monoxide chemistry.chemical_compound chemistry Silicon nitride Optoelectronics business Silicon oxide Stoichiometry
Zdroj:	MRS Proceedings. 285
ISSN:	1946-4274 0272-9172
Popis:	Silicon oxide and oxynitride films are deposited, at low temperature (≤ 450°C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We investigate in this paper the specific influence of laser fluence, target materials, substrate temtperature and oxygen pressure on the composition and final properties of SiOxNy grown layers. The synthesis of good quality SiO2 films is demonstratedx. By contrast, the preparation of stoichiometric Si7N4 layers by laser ablation has to be optimized.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e06cad89713503662e382d35e26621eb https://doi.org/10.1557/proc-285-319 Zobrazit plný text záznamu Full text from SpringerLink