The influence of doping on charge carrier transport in a-Si:H
| Autor: | S von Aichberger, D Herm, Marinus Kunst |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
inorganic chemicals
Condensed matter physics Renewable Energy Sustainability and the Environment Chemistry Photoconductivity Doping technology industry and agriculture Analytical chemistry social sciences Trapping Electron Thermal conduction Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Condensed Matter::Superconductivity lipids (amino acids peptides and proteins) Condensed Matter::Strongly Correlated Electrons Charge carrier Absorption (electromagnetic radiation) human activities Recombination |
| Zdroj: | Solar Energy Materials and Solar Cells. 66:195-201 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/s0927-0248(00)00173-2 |
| Popis: | The influence of doping on the (opto)electronic properties of a-Si : H films is investigated by transient photoconductivity and photo-induced absorption measurements. The decay rate of the majority charge carrier decreases with doping due to fast minority carrier trapping already active at low doping levels. The transition from electron to hole conduction is observed at 3 ppm B2H6. At high doping levels the recombination rate becomes faster by recombination via doping-induced defects. |
| Databáze: | OpenAIRE |
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