Formation of hafnium carbide thin films by plasma enhanced chemical vapor deposition from bis(η-cyclopentadienyl)dimethylhafnium as precursor

Autor:	M. Rump, Harald Suhr, Gerhard Erker, P. Špatenka
Rok vydání:	1995
Předmět:	Materials science Inorganic chemistry chemistry.chemical_element General Chemistry Chemical vapor deposition Combustion chemical vapor deposition Carbide Hafnium Carbon film chemistry Plasma-enhanced chemical vapor deposition General Materials Science Thin film Carbon
Zdroj:	Applied Physics A Materials Science & Processing. 60:285-288
ISSN:	1432-0630 0947-8396
DOI:	10.1007/bf01538404
Popis:	Thin films of hafnium carbide have been deposited by plasma-enhanced chemical vapor deposition using bis(η-cyclopentadienyl)dimethylhafnium, Cp2 Hf(CH3)2, as precursor in 13.56 MHz planar reactor. The influence of the various experimental parameters on film properties has been studied. The carbon content ranged from 11 to 40 weight % and increased with the deposition rate. The film hardness varied between 1300 and 2000 HK. Depending on the carbon content and power delivered in the discharge, the film resistivity and film density ranged from 271 to 105 μΩ·cm and from 3.4 to 10.4 g/cm3, respectively, and the film composition varied from HfC to hafnium containing a-C: H films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e063af0f9144a8dbbc4eb43a7d7c3343 https://doi.org/10.1007/bf01538404 Zobrazit plný text záznamu Full text from SpringerLink