Superconductivity of MgB2 sputtered thin films with aluminium nitride buffer layers
| Autor: | Gheorghe Ilonca, V. Toma, D. Marconi, P. Balint, M. Bodea, T. Jurcut, Tzuen-Rong Yang, Aurel Pop |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Condensed matter physics Aluminium nitride Energy Engineering and Power Technology Charge density Sputter deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Magnetization chemistry.chemical_compound chemistry Hall effect Electrical and Electronic Engineering Thin film Penetration depth Critical field |
| Zdroj: | Physica C: Superconductivity and its Applications. :557-559 |
| ISSN: | 0921-4534 |
| DOI: | 10.1016/j.physc.2007.03.251 |
| Popis: | MgB 2 thin films were deposited, at low temperature substrates, in situ, on a polished c-cut sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc–4 terminal method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, H c2 ( T ) and irreversibility field H irr ( T ) versus temperature were determinated. The Hall density of charge are slightly temperature dependence and positive in normal state. The critical temperature of 30–32 K and critical current density of 10 6 –10 7 A/cm 2 at 4, 2 K were obtained. Using extracted data, the coherence length ξ 0 , anisotropic coefficient γ and penetration depth λ L were calculated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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