Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode

Autor:	Chowdam Venkata Prasad, Joon Hui Park, Ji Young Min, Wonjin Song, Madani Labed, Yusup Jung, Sinsu Kyoung, Sangmo Kim, Nouredine Sengouga, You Seung Rim
Rok vydání:	2023
Předmět:	Physics and Astronomy (miscellaneous) General Materials Science Energy (miscellaneous)
Zdroj:	Materials Today Physics. 30:100932
ISSN:	2542-5293
DOI:	10.1016/j.mtphys.2022.100932
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e04f3db22e92e77947fbcc0b2e2bbd34 https://doi.org/10.1016/j.mtphys.2022.100932 Zobrazit plný text záznamu Full Text from ScienceDirect