Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material
Autor: | S. J. Martin, Michael E. Mills, Albert Achen, Dan Castillo, Paul H. Townsend |
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Rok vydání: | 1997 |
Předmět: |
chemistry.chemical_classification
Materials science Isotropy chemistry.chemical_element Polymer Dielectric Condensed Matter Physics Oxygen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Resist Benzocyclobutene law Thermal Electrical and Electronic Engineering Composite material Spark plug |
Zdroj: | Microelectronic Engineering. 33:327-334 |
ISSN: | 0167-9317 |
Popis: | Polymer films of DVS-BCB (CYCLOTENETM 5021) exhibit a combination of material and processing properties which make them an attractive low k interlayer dielectric (ILD) material for integration into IC manufacturing processes. Key DVS-BCB film properties include isotropic dielectric constant (2.65 @ 1 MHz); equilibrium moisture absorption ( 350°C; low alpha-particle emission rates. The DVS-BCB films are easily produced using simple resist spin track equipment and are subsequently cured without generation of corrosive or volatile by-products under anaerobic conditions (less than 100 ppm oxygen). Films are completely cured for typical processing conditions at 250°C for 1 h or as rapidly as 30 s at 325°C. DVS-BCB has been demonstrated to fill 0.20 μm gaps at 5:1 aspect ratios. Fully cured films exhibit greater than 95% degree-of-planarization for isolated feature widths of 20 μm and less; 80% for widths between 20 μm and 100 μm. Currently, the acceptance of DS-BBC is challenged by today's thermal requirements of greater than 400°C for CD-W via/plug and post device/contact anneals. The development of moderate temperature metal deposition processes and reduced final device anneal temperatures would enable implementation of DS-BBC as an LID material with the realization of its low dielectric constant, excellent gap-fill and other attractive features. |
Databáze: | OpenAIRE |
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