Autor:	V. E. Shvaiko-Shvaikovskii, V. D. Chupov, A. P. Garshin, Yu. N. Vil'k
Rok vydání:	2001
Předmět:	Range (particle radiation) Chemistry Schottky defect Mineralogy chemistry.chemical_element Schottky diode Thermodynamics Partial pressure Crystallographic defect Nitrogen Vacancy defect Kröger–Vink notation Materials Chemistry Ceramics and Composites
Zdroj:	Refractories and Industrial Ceramics. 42:146-150
ISSN:	1083-4877
DOI:	10.1023/a:1011384129992
Popis:	Results of a theoretical analysis of the Schottky and anti-Frenkel defect formation in α-BN carried out within the framework of an ionic model and quasi-chemical approximation are presented. Equations for describing of the α-BN point defect formation as a function of the partial nitrogen pressure and temperature under different conditions of electrical neutrality are derived and solutions thereof are given. The equations derived allow prediction of any type of α-BN defects in any range of the partial nitrogen pressure and temperature. It is suggested that nitrogen vacancies constitute the predominant type of nonstoichiometric point defect in α-BN.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e04c7084de155f6387bfd95514c1d29a https://doi.org/10.1023/a:1011384129992 Zobrazit plný text záznamu Full text from SpringerLink