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The shrink of device node to 65 and 45nm node masks mask manufacturers paying their attention to repair process in terms of mask cost efficiency. Thus, it is very important to define the repair performance accurately and introduce adequate tools timely. Usually the repair performance has been expressed as an edge placement error, transmittance change and quartz damage. We have used the measuring tools such as CD SEM, AFM and AIMS to measure those factors and the 2D simulator, Solid C to predict the repair performance. In this case, 3D topographical effect is not considered. However, the 3D topography of pattern becomes quite important for 45 nm node or less. ArF immersion lithography is the strongest candidate for the 45 nm node. The immersion technology makes it possible to use of hyper NA systems 1 . Hyper NA will increase the polari zation effect of illumination source 2 . Therefore, the topography of pattern is quite important with respect to the intensity and the polarization of various diffraction orders. This paper presents repair specifications based on the Solid E 3D simulator of the 45 nm node. Keywords: Immersion lithography, Repair, 3D simulation, DoE |
