Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
| Autor: | Tibor Lalinský, Edmund Dobročka, J. Osvald, J. Dzuba, M. Vallo, Ivan Rýger, Andrej Vincze, Gabriel Vanko |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Transistor General Physics and Astronomy chemistry.chemical_element Thermionic emission Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry law Gate oxide Phase (matter) Optoelectronics Thermal stability Iridium business High electron Layer (electronics) |
| Zdroj: | Applied Surface Science. 283:160-167 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2013.06.069 |
| Popis: | We report on a high temperature forming of iridium oxides (IrO 2 ) gates of circular AlGaN/GaN high electron mobility transistors (C-HEMTs) to be predetermined for high temperature applications. IrO 2 gate interfacial layer is formed by high temperature oxidation ( T = 500–800 °C, for 1 min) of 15 nm thick Ir gate contact layer. A comprehensive microstructural and electrical characterization of the IrO 2 gates is carried out to explain the improved transport properties and thermal stability of the gate interfaces. It is found that the transformation of Ir gate layer into its crystalline IrO 2 phase at oxidation temperatures of 700 °C and 800 °C provides the high barrier gate interface with prevailing thermionic emission transport mechanism. Accelerated reliability tests are used to confirm C-HEMT thermally stable performance deduced from both the gate interface and 2DEG channel stability. The introduced AlGaN/GaN C-HEMTs with high temperature grown IrO 2 gates seem to be very attractive for both the high temperature operated electronic and sensor devices. |
| Databáze: | OpenAIRE |
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