Pulsed I /V and S -parameters measurement system for isodynamic characterization of power GaN HEMT transistors
| Autor: | Luis C. Nunes, Jose C. Pedro, Cristiano F. Goncalves, Pedro M. Cabral |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry System of measurement Transistor 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor 01 natural sciences Computer Graphics and Computer-Aided Design Computer Science Applications law.invention Power (physics) Characterization (materials science) law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | International Journal of RF and Microwave Computer-Aided Engineering. 28:e21515 |
| ISSN: | 1096-4290 |
| DOI: | 10.1002/mmce.21515 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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