Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC
| Autor: | Anthony S. Holland, Geoffrey K. Reeves, Mark C Ridgway, Martyn H. Kibel, P. Tanner, Neelu Shrestha, Patrick W. Leech |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Auger electron spectroscopy Materials science Annealing (metallurgy) Mechanical Engineering Contact resistance Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Ion Ion implantation Low energy Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology Order of magnitude |
| Zdroj: | MRS Advances. 2:2903-2908 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2017.314 |
| Popis: | The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface. |
| Databáze: | OpenAIRE |
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