Reactivities of ultrathin alumina films exposed to intermediate pressures of H2O: Substrate-mediated mechanism for growth and loss of surface order
| Autor: | Jeffry A. Kelber, N.P. Magtoto, M. Jain, Chiranjeevi Vamala, D. R. Jennison, Peter A. Schultz |
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| Rok vydání: | 2007 |
| Předmět: |
Nial
Auger electron spectroscopy Materials science Low-energy electron diffraction Oxide Analytical chemistry Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Crystallography chemistry Vacancy defect Materials Chemistry Layer (electronics) Aluminide computer computer.programming_language |
| Zdroj: | Surface Science. 601:3464-3471 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2007.06.036 |
| Popis: | The response of ordered ultrathin Al2O3 films on NiAl(1 1 0) and Ni3Al(1 1 0) substrates to sequential exposures at varying pressures of H2O between 10−7 Torr and 10−3 Torr, ambient temperature, was characterized by LEED, AES and density functional theory (DFT) calculations. In all cases, an increase in average oxide thickness, as determined by AES, was observed, consistent with a field-induced oxide growth mechanism. Ordered oxide films of initial average thicknesses of 7 A and 12 A grown on NiAl(1 1 0) achieved a limiting thickness of 17(1) A, while films of initial thickness of 7 A and 11 A grown on Ni3Al(1 1 0) achieved a limiting thickness of 12(1) A. The LEED patterns for the thinner (7 A) films were not observed after exposure to 10−5 Torr (NiAl(1 1 0)), or 10−4 Torr (Ni3Al(1 1 0)). In contrast, LEED patterns for the films of greater initial thickness persisted after exposures to 10−3 Torr UHV. DFT calculations indicate an Al vacancy formation energy that is significantly greater (by ∼0.5 eV) on the surface that has the thicker oxide film, directly opposite to what may be naively expected. A simple coordination argument supports these numerical results. Therefore, the greater limiting oxide thickness observed on NiAl(1 1 0) demonstrates that the rate determining step in the oxide growth process is not Al removal from the metal substrate and transport across the oxide/metal interface. Instead, the results indicate that the determining factor in the oxide growth mechanism is the kinetic barrier to Al diffusion from the substrate bulk to the oxide/metal interface. The persistence of the LEED patterns observed for the films of greater initial oxide thickness indicates that the surface disorder generally observed for alumina films grown on aluminide substrates and exposed to intermediate pressures of H2O is due to the growth of a disordered alumina layer over an ordered substrate, rather than to direct H2O interaction with terrace sites. |
| Databáze: | OpenAIRE |
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