| Autor: |
Alexey Mironov, Alexander V. Latyshev, D. I. Rogilo, Dmitry Sheglov, Sergei Ponomarev |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM). |
| DOI: |
10.1109/edm52169.2021.9507592 |
| Popis: |
Properties of layered In 2 Se 3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3–5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In 2 Se 3 films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In 2 Se 3 phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by ~104 times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In 2 Se 3 ⇔ β'-In 2 Se 3 observed previously in the 140–180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774–6782]. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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