Precursor chemistry and film growth with (methylcyclopentadienyl) (1,5-cyclooctadiene)iridium
| Autor: | N. Mettlach, X.-M. Yan, J. P. Endle, R. L. Hance, J. M. White, John G. Ekerdt, P. D. Kirsch, Y. M. Sun, Sucharita Madhukar |
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| Rok vydání: | 2000 |
| Předmět: |
Vapor pressure
Scanning electron microscope 1 5-Cyclooctadiene Inorganic chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Oxygen Surfaces Coatings and Films chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy X-ray crystallography Iridium |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:10-16 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | We have investigated the chemistry of the iridium precursor ((methylcyclopentadienyl) (1,5-cyclooctadiene))iridium (MeCpIrCOD) and have utilized the precursor for chemical vapor deposition (CVD) of iridium films. The vapor pressure of the precursor is ∼80 and ∼280 mTorr at 80 and 120 °C, respectively. The precursor slowly dimerized at elevated temperatures (>60 °C). Pyrolysis studies revealed that the compound decomposes by breaking the methylcyclopentadienyl–Ir and cyclooctadiene–Ir bonds nearly simultaneously at temperatures above 400 °C. Iridium films grown at substrate temperatures between 250 and 400 °C were characterized by in situ x-ray photoelectron spectroscopy, x-ray diffraction, and scanning electron microscopy. Pure CVD iridium films were obtained on various substrates by codosing MeCpIrCOD with oxygen or hydrogen. Without oxygen, the metal films required higher growth temperatures and contain ∼87% carbon. Oxygen also affected the film deposition rate and lowered growth temperature. X-ray diff... |
| Databáze: | OpenAIRE |
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